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Advance Product Information
April 13, 2005
DC - 35 GHz Wideband Amplifier
* * * * * * * * *
TGA4832
Frequency Range: DC to 35GHz Linear 40Gb/s Optical Modulator Driver 12dB Small Signal Gain 17 dBm Typical Output Power (4Vpp) < 15ps Edge Rates 4Vpp 40Gb/s NRZ PRBS Linear 0.15um pHEMT Technology Bias: Vd = 5V, Id = 135 mA Chip Size: 1.79 x 1.00 x 0.1 mm (0.070 x 0.039 x 0.004 in)
Key Features and Performance
Product Description
The TriQuint TGA4832 is a medium power wideband AGC amplifier which operates from DC to 35 GHz. Typical small signal gain is 12dB and typical input and output return losses are >10dB. The TGA4832 provides 18 dBm of output power at 1 dB gain compression. Drain bias may be applied through the output port for best efficiency or through the on-chip drain termination. Two stages in cascade demonstrate 3.8Vpp output voltage swing with 350mV at the input when stimulated with 40Gb/s 2^31-1prbs NRZ data. RF ports are DC coupled enabling the user to customize system corner frequencies. The TGA4832 requires off-chip decoupling and blocking components. The TGA4832 is suitable for a variety of wideband electronic warfare systems such as radar warning receivers, electronic counter measures, decoys, and jammers. It is also an excellent choice for 40Gb/s NRZ applications. The TGA4832 is capable of driving an Electro-Absorptive optical Modulator (EAM) with electrical Non-Return to Zero (NRZ) data. In addition, the TGA4832 may also be used as a predriver or a receive gain block. Bond pad and backside metallization is gold plated for compatibility with eutectic alloy attachment methods as well as the thermocompression and thermosonic wire bonding processes. Each device is 100% DC and RF tested on-wafer to ensure performance compliance. The device is available in die form.
Gain (dB)
Primary Applications
* * * * Test Equipment Ultra Wideband 40Gb/s NRZ EAM Driver 40Gb/s NRZ Predriver or Gain Block
Measured Performance
Bias Conditions: Vd = 5V, Id = 135mA
15 12 9 6 3 0 -3 -6 -9 -12 -15
0 5 10 15 20 25 30 35 40 45 50
`
25
Gain
20 15 10 5
-5
Input
-10 -15
Output
-20 -25
Frequency (GHz)
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice
1
TriQuint Semiconductor Texas - Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Return Loss (dB)
0
Advance Product Information
TABLE I MAXIMUM RATINGS 1/
SYMBOL PARAMETER
Biased thru On-chip Drain Termination Vd 6V
April 13, 2005 TGA4832
Biased thru the RF Output Port using a Bias Tee Vd 6V
NOTES
POSITIVE SUPPLY VOLTAGE
2/, 3/ Id 135 mA Id 135 mA
POSITIVE SUPPLY CURRENT
3/
POWER DISSIPATION
1.3 W
0.7 W
3/, 4/
NEGATIVE GATE Vg | Ig | Voltage Range Gate Current CONTROL GATE Vctrl | Ictl | Voltage Range Gate Current RF INPUT PIN Vin TCH TM TSTG
Notes: 1/ 2/ 3/ 4/ 5/ These ratings represent the maximum operable values for the device. Assure Vd - Vctrl 8 V. Compute Vd as follows, Vd = V+ - Id*40 Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. When operated at this power dissipation with a base plate temperature of 70C, the median life is 1 E+6 hours. Assure Vctrl never exceeds Vd during bias up and down sequences. Also, assure Vctrl never exceeds 5V during normal operation. 6/ Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
+1V to -3 V 10 mA
Vd/2 to -3V 10 mA
5/
Sinusoidal Continuous Wave Power 40 Gb/s PRBS Input Voltage Peak to Peak OPERATING CHANNEL TEMPERATURE MOUNTING TEMPERATURE (30 SECONDS) STORAGE TEMPERATURE
TBD TBD 117 0C 320 0C -65 to 117 0C 6/
2
TriQuint Semiconductor Texas - Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
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April 13, 2005 TGA4832
TABLE II DC PROBE TEST
(TA = 25 C, Nominal) SYMBOL Imax Vp Gm PARAMETER Maximum Drain Current Pinch-off Voltage Transconductance MINIMUM 45 -1 180 MAXIMUM 603 0 630 UNIT mA V V
TABLE III RF CHARACTERIZATION TABLE
(TA = 25C Nominal)
NOTE
TEST
MEASUREMENT CONDITIONS MIN
VALUE TYP
35
UNITS MAX
GHz dB
SMALL SIGNAL BW 1/, 2/ SMALL-SIGNAL GAIN MAGNITUDE GAIN FLATNESS 100KHz thru 30GHz
12
1/, 2/
100KHz thru 30GHz
+/-1
dB
1/, 2/
INPUT RETURN LOSS MAGNITUDE OUTPUT RETURN LOSS MAGNITUDE OUTPUT POWER AT P1dB
100KHz thru 30GHz
10
dB
1/, 2/
100KHz thru 30GHz
10
dB
100KHz thru 30GHz 40Gb/s NRZ
18 4
dBm Vpp
3/, 4/
AMPLITUDE
Notes: 1/ 2/ 3/ 4/ Verified at die level on-wafer probe (future requirement, data is not currently available). Small Signal S-Parameter RF Probe Bias: Vd = 5 V, Vctrl=float, adjust Vg to achieve Id=135mA Verified by design, MMIC assembled onto evaluation platform detailed on page 8. Vd=5V, VCTRL=Float, and VG adjusted for Id=135mA.
3
TriQuint Semiconductor Texas - Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
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April 13, 2005 TGA4832
TABLE IV THERMAL INFORMATION* PARAMETER
RJC Thermal Resistance (channel to backside of carrier)
TEST CONDITIONS
Vds = 2.5 V* ID = 135 mA Pdiss = 0.34 W
TCH (oC)
92
RTJC (qC/W)
64
TM (HRS)
1.5 E+7
* Vds = 2.5V across common gate or common source FET in cascode pair. Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. Thermal transfer is conducted thru the bottom of the TGA4832 into the mounting carrier. Design the mounting interface to assure adequate thermal transfer to the base plate.
4
TriQuint Semiconductor Texas - Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
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April 13, 2005 TGA4832
Measured Fixtured Data Bias Conditions: Vd = 5V, Id= 135mA
15 25
Gain
Gain (dB)
12 9 6 3 0 -3 -6 -9 -12 -15
0
22
`
20 15 10 5
-5
Input
-10 -15
Output
-20 -25
30 35 40 45 50
5
10
15
20
25
Frequency (GHz)
Output Power @ P1dB (dBm)
20 18 16 14 12 10 8 6 0 5 10 15 20 25 30 35 40
Frequency (GHz)
Return Loss (dB)
5
0
TriQuint Semiconductor Texas - Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
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April 13, 2005 TGA4832
Measured Fixtured Data
24 21
Bias Conditions: Vd = 5V, Id= 135mA
Output Power (dBm)
18 15 12
1 GHz
9
35 GHz
6
40 GHz
3 0 -5 -3 -1 1 3 5 7 9 11 13
Input Power (dBm)
40Gb/s NRZ 2^31-1 PRBS Vin=1.8Vpp.
40 Gb/s Data Eye
6
TriQuint Semiconductor Texas - Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
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April 13, 2005 TGA4832
Bias Procedure for V+ = 10.4 V Operation Fiber Optic Applications
Bias ON
1. Disable the PPG 2. Set Vg=-1V 3. Set Vctrl = 2.2V (if appliable) 4. Increase V+ to 7V observing Id. - Assure Id increased to between 10 and 100mA 5. Raise V+ to 10.4V - Id should still be between 10 and 100mA 6. Make Vg more positive until Id=135mA. - Typical value for Vg is -0.3V 7. Enable the PPG
Bias OFF
1. Disable the output of the PPG 2. Set Vctrl = 0V (if appliable) 3. Set V+=0V 4. Set Vg=0V
Note: Assure Vctrl never exceeds Vd during Bias ON and Bias OFF sequences and during normal operation.
Bias Procedure @ Vd = 5V Operation
1. Bias Conditions: Vd = 5.0 V, Id = 135 mA 2. Adjust Vg for Id = 135 mA 3. Adjust Vctrl for Gain and Eye crossing control. Vctrl bias is optional 4. Positive or negative gate bias may be required to achieve recommended operating point:- 0.5 V < Vg < + 0.5 V Note: +5V Bias operation requires a bias tee
7
TriQuint Semiconductor Texas - Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information Mechanical Drawing
d ! b A # " $
April 13, 2005 TGA4832
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8
TriQuint Semiconductor Texas - Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
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April 13, 2005 TGA4832
Recommended Assembly Diagram
9FWUO
9
5) ,1
5) 287 9'
9J
Note: Input and Output ports are DC coupled.
Recommended Components:
* CAPACITOR VALUE None 0.01 uF 0.1 uF
BYPASSING EFFECTIVE TO: 20 MHz 4 MHz 250 KHz
9
TriQuint Semiconductor Texas - Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
April 13, 2005 TGA4832
Assembly Process Notes
Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C for 30 sec An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes: * * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200 C.
10
TriQuint Semiconductor Texas - Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com

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